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OPA4H014-SEP

ACTIVE

Radiation-tolerant, 11-MHz, low-noise, precision rail-to-rail output JFET amplifier

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Data sheet

OPA4H014-SEP

ACTIVE
Data sheet Order now

Product details

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 18 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Vos (offset voltage at 25°C) (max) (mV) 0.12 GBW (typ) (MHz) 11 Slew rate (typ) (V/µs) 20 Rail-to-rail Out Offset drift (typ) (µV/°C) 0.35 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 5.8 CMRR (typ) (dB) 140 Rating Space Operating temperature range (°C) -55 to 125 Input bias current (max) (pA) 10 Iout (typ) (A) 0.03 Architecture FET Input common mode headroom (to negative supply) (typ) (V) -0.1 Input common mode headroom (to positive supply) (typ) (V) -3.5 Output swing headroom (to negative supply) (typ) (V) 0.2 Output swing headroom (to positive supply) (typ) (V) -0.2 THD + N at 1 kHz (typ) (%) 0.00005
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 18 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Vos (offset voltage at 25°C) (max) (mV) 0.12 GBW (typ) (MHz) 11 Slew rate (typ) (V/µs) 20 Rail-to-rail Out Offset drift (typ) (µV/°C) 0.35 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 5.8 CMRR (typ) (dB) 140 Rating Space Operating temperature range (°C) -55 to 125 Input bias current (max) (pA) 10 Iout (typ) (A) 0.03 Architecture FET Input common mode headroom (to negative supply) (typ) (V) -0.1 Input common mode headroom (to positive supply) (typ) (V) -3.5 Output swing headroom (to negative supply) (typ) (V) 0.2 Output swing headroom (to positive supply) (typ) (V) -0.2 THD + N at 1 kHz (typ) (%) 0.00005
TSSOP (PW) 14 32 mm² 5 x 6.4
  • Radiation tolerant
    • Single even latch-up (SEL) immune to 43 MeV•cm2/mg
    • ELDRS free to 30 krad(Si)
    • Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si)
  • Space enhanced plastic
    • Au bondwire and NiPdAu lead finish
    • Enhanced mold compound for low outgassing
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Extended product change notification
    • Product traceability
  • Very-low offset drift: 1 µV/°C maximum
  • Very-low offset: 120 µV
  • Low input bias current: 10 pA maximum
  • Low noise: 5.1 nV/√Hz
  • Slew rate: 20 V/µs
  • Low supply current: 2 mA maximum
  • Input voltage range includes V– supply
  • Wide supply range: 4.5 V to 18 V
  • Radiation tolerant
    • Single even latch-up (SEL) immune to 43 MeV•cm2/mg
    • ELDRS free to 30 krad(Si)
    • Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si)
  • Space enhanced plastic
    • Au bondwire and NiPdAu lead finish
    • Enhanced mold compound for low outgassing
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Extended product change notification
    • Product traceability
  • Very-low offset drift: 1 µV/°C maximum
  • Very-low offset: 120 µV
  • Low input bias current: 10 pA maximum
  • Low noise: 5.1 nV/√Hz
  • Slew rate: 20 V/µs
  • Low supply current: 2 mA maximum
  • Input voltage range includes V– supply
  • Wide supply range: 4.5 V to 18 V

The OPA4H014-SEP is a low-power JFET input operational amplifier (op amp) that features good drift and low input bias current. With an input range that includes V– and a rail-to-rail output, designers can take advantage of the low-noise characteristics of JFET amplifiers while interfacing to single-supply, precision analog-to-digital converters (ADCs) and digital-to-analog converters (DACs).

The OPA4H014-SEP achieves 11‑MHz unity-gain bandwidth and 20-V/µs slew rate, while consuming only 1.8 mA (typical) of quiescent current. This device runs on a single 4.5‑V to 18‑V supply or dual ±2.25‑V to ±9‑V supplies.

The op amp is built in a plastic, 14‑pin, TSSOP package with radiation hardness up to 43 MeV•cm2/mg (SET) and is ELDRS free up to 30 krad(Si).

The OPA4H014-SEP is a low-power JFET input operational amplifier (op amp) that features good drift and low input bias current. With an input range that includes V– and a rail-to-rail output, designers can take advantage of the low-noise characteristics of JFET amplifiers while interfacing to single-supply, precision analog-to-digital converters (ADCs) and digital-to-analog converters (DACs).

The OPA4H014-SEP achieves 11‑MHz unity-gain bandwidth and 20-V/µs slew rate, while consuming only 1.8 mA (typical) of quiescent current. This device runs on a single 4.5‑V to 18‑V supply or dual ±2.25‑V to ±9‑V supplies.

The op amp is built in a plastic, 14‑pin, TSSOP package with radiation hardness up to 43 MeV•cm2/mg (SET) and is ELDRS free up to 30 krad(Si).
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Type Title Date
* Data sheet OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic datasheet (Rev. A) PDF | HTML 17 Apr 2022
* Radiation & reliability report OPA4H014-SEP Single Event Latchup Report PDF | HTML 20 May 2024
* VID OPA4H014-SEP VID V62/21607 27 Feb 2024
* Radiation & reliability report OPA4H014-SEP Neutron Displacement Damage Characterization Report PDF | HTML 08 Nov 2023
* Radiation & reliability report OPA4H014-SEP Production Flow and Reliability Report PDF | HTML 08 Nov 2023
* Radiation & reliability report OPA4H014-SEP Total Ionizing Dose Report PDF | HTML 08 Nov 2023
Technical article 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) PDF | HTML 11 Jan 2024
Technical article 우주 항공 강화 제품이 저지구 궤도 애플리케이션의 과제를 해결하는 방법 (Rev. A) PDF | HTML 11 Jan 2024
Technical article How Space Enhanced Products Address Challenges in low Earth orbit Applications (Rev. A) PDF | HTML 18 Dec 2023
Circuit design Rad.-Tol., 30-krad, Comparing Current Sensing Amp W/ Second Stage Buffer to ADC PDF | HTML 19 May 2022
Application brief Analog Front-End Design With Texas Instruments’ Tooling Landscape PDF | HTML 07 Mar 2022

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